A crystal growth furnace is a device for the formation of crystals of a specific alignment and size by gas, liquid or solid phase conversion under specific conditions. According to different crystal growth methods and technical requirements, the design and function of crystal growth furnace are also different.
A. Equipment overview
1.1 Equipment use: crystal material growth equipment.
1.2 VGF, HB, HGF, VB product features:
1.2.1 For crystal growth of GaAs and other compounds;
1.2.2 By structure: vertical growth, horizontal growth;
1.2.3 Growth mode: gradient growth and mobile growth;
1.3 Crystal growth size: 2-6 inches
1.4 Equipment classification :HB, HGF, VGF, VB
B.Main technical parameters
Special equipment for crystal film growth of Ⅲ-Ⅴ,Ⅱ-Ⅵ compound semiconductor is provided to meet the production and research and development process of compound semiconductor devices.
Structural form | Single tube horizontal,heating furnace body can move left and right |
Suitable crystal (customizable) | 2~4 inches |
Effective heating length of furnace body | 1600mm |
Maximum opening temperature | 1300℃ |
Accuracy of constant temperature zone (static closed tube) | ±0.5℃ |
Heating rate | The temperature rise rate can be controlled 0~15℃/min |
Cooling rate | 0~5℃/min |
Power supply | Three phase five wire ~380V±10% ,50Hz |